FCP190N65S3R0
Manufacturer:
On Semiconductor
Mfr.Part #:
FCP190N65S3R0
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 144 W 650 V Continuous Drain Current (ID):17 A 33 nC
| Parameter | Value |
|---|---|
| Gate Charge | 33 nC |
| Gate to Source Threshold Voltage | 2.5 V |
| Continuous Drain Current (ID) | 17 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 190 mΩ |
| Input capacitance | 1.35 nF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 144 W |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 482
Distributors
pcbx
pcbxUnit Price$1.43286
Ext.Price$1.43286
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.43286 | $1.43286 |
| 10 | $0.83869 | $8.38690 |
| 25 | $0.82596 | $20.64900 |
| 50 | $0.81343 | $40.67150 |
| 100 | $0.80107 | $80.10700 |
| 300 | $0.71490 | $214.47000 |
| 500 | $0.63800 | $319.00000 |
| 1000 | $0.56938 | $569.38000 |